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Lattice damage in III/V compound semiconductors caused by dry etching
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Personen und Körperschaften: | , , |
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Titel: |
Lattice damage in III/V compound semiconductors caused by dry etching |
In: | Applied Physics Letters, 67, 1995, 14, S. 2034-2036 |
veröffentlicht: |
AIP Publishing
|
Umfang: | 2034-2036 |
ISSN: |
0003-6951 1077-3118 |
DOI: | 10.1063/1.115069 |
Zusammenfassung: | <jats:p>The crystal damage in optoelectronic devices caused by dry etching methods [ion beam etching, reactive ion etching, etching with plasmas excited by electron cyclotron resonance (ECR)] was evaluated. The analytics applied are photoluminescence and Fabry-Perot damping measurement which were applied to waveguides. A significant improvement is observed using ECR etching as low damage combined with high etching rates is concerned. To evaluate a method as soft or hard etching, Fabry-Perot damping measurement has emerged to be the most discriminate and decisive tool.</jats:p> |
Format: | E-Article |
Quelle: | AIP Publishing (CrossRef) |
Sprache: | Englisch |