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Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes
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Personen und Körperschaften: | , , , , , , , , , |
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Titel: |
Effect of dislocation density on efficiency droop in GaInN∕GaN light-emitting diodes |
In: | Applied Physics Letters, 91, 2007, 23 |
veröffentlicht: |
AIP Publishing
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ISSN: |
0003-6951 1077-3118 |
DOI: | 10.1063/1.2822442 |
Zusammenfassung: | <jats:p>Measurements of light-output power versus current are performed for GaInN∕GaN light-emitting diodes grown on GaN-on-sapphire templates with different threading dislocation densities. Low-defect-density devices exhibit a pronounced efficiency peak followed by droop as current increases, whereas high-defect-density devices show low peak efficiencies and little droop. The experimental data are analyzed with a rate equation model to explain this effect. Analysis reveals that dislocations do not strongly impact high-current performance; instead they contribute to increased nonradiative recombination at lower currents and a suppression of peak efficiency. The characteristics of the dominant recombination mechanism at high currents are consistent with processes involving carrier leakage.</jats:p> |
Format: | E-Article |
Quelle: | AIP Publishing (CrossRef) |
Sprache: | Englisch |