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Photoelectrochemical studies of a Ga(As,P)/GaAs/Ga(As,P)/n+-GaAs multijunction electrode
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Titel: |
Photoelectrochemical studies of a Ga(As,P)/GaAs/Ga(As,P)/n+-GaAs multijunction electrode |
In: | Journal of Applied Physics, 65, 1989, 3, S. 1302-1307 |
veröffentlicht: |
AIP Publishing
|
Umfang: | 1302-1307 |
ISSN: |
0021-8979 1089-7550 |
DOI: | 10.1063/1.343025 |
Zusammenfassung: | <jats:p>A multijunction structure, Ga(As,P)/GaAs/Ga(As,P)/n+-GaAs, and a conventional Ga(As,P)/n+-GaAs structure were compared using a variety of photoelectrochemical (PEC) techniques. The samples were grown, using metalorganic chemical vapor deposition, on n+-GaAs substrates with an initial graded region with gradually varying composition. The conventional sample had a terminating top layer with constant composition GaAs0.45 P0.55. In the multijunction sample, a GaAs region was introduced between the graded region and the top layer, resulting in an interface with an abrupt heterojunction. The multijunction electrode showed several unusual PEC features, including a very low dark current over a wide potential region, both cathodic and anodic photoeffects, and a pronounced decrease in photoactivity when going to shorter wavelengths. A plausible interpretation is presented, also providing insights into the effects of graded regions versus heterojunctions, and illustrating the value of PEC studies in probing the interior of complex semiconductor materials.</jats:p> |
Format: | E-Article |
Quelle: | AIP Publishing (CrossRef) |
Sprache: | Englisch |