TY - JOUR TI - High net doping concentration responsible for critical diode breakdown behavior of upgraded metallurgical grade multicrystalline silicon solar cells T2 - Journal of Applied Physics VL - 108 IS - 2 AU - Kwapil, Wolfram and Wagner, Matthias and Schubert, Martin C. and Warta, Wilhelm PB - AIP Publishing PY - 2010 PY - 2010 LA - English SN - 0021-8979 SN - 1089-7550 UR - http://dx.doi.org/10.1063/1.3463332 UR - https://katalog.ub.uni-leipzig.de/Record/ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTA2My8xLjM0NjMzMzI ER -