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Microscopic charge carrier lifetime in silicon from a transient approach
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Titel: |
Microscopic charge carrier lifetime in silicon from a transient approach |
In: | Applied Physics Letters, 107, 2015, 12 |
veröffentlicht: |
AIP Publishing
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ISSN: |
0003-6951 1077-3118 |
DOI: | 10.1063/1.4931358 |
Zusammenfassung: | <jats:p>We present an experimental approach to determine the charge carrier lifetime in silicon based on the measured transient decay of the emitted photoluminescence intensity, requiring only a crystal volume of 50 μm in diameter. This becomes feasible by a combination of the time correlated single photon counting technique and confocal microscopy. Using combined pulsed and pulse train laser excitation, we obtain a self-consistent charge carrier lifetime in a high dynamic range from 100 ns to ms and an injection range from 1010 cm−3 to high injection densities. An iterative data evaluation routine incorporates all effects induced by the spatially non-homogeneous charge carrier generation.</jats:p> |
Format: | E-Article |
Quelle: | AIP Publishing (CrossRef) |
Sprache: | Englisch |