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Scandium thin films‐structure and electrical resistance (I). A study on films obtained in a vacuum of 10−5 up to 10−6 Torr
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Titel: |
Scandium thin films‐structure and electrical resistance (I). A study on films obtained in a vacuum of 10−5 up to 10−6 Torr |
In: | Kristall und Technik, 15, 1980, 1, S. 43-53 |
veröffentlicht: |
Wiley
|
Umfang: | 43-53 |
ISSN: |
0023-4753 |
DOI: | 10.1002/crat.19800150108 |
Zusammenfassung: | <jats:title>Abstract</jats:title><jats:p>A structure as well as a specific electrical resistance of scandium films having a various thickness (300 up to 2800 Å) obtained at a condensation rate: <jats:italic>w</jats:italic>⋍ 1 up to 155 Å/s have been studied in the present work. Depending on condensation conditions in films a hydride ScH<jats:sub><jats:italic>x</jats:italic></jats:sub>, h.c.p. — Sc, or ScH<jats:sub><jats:italic>x</jats:italic></jats:sub> + Sc alternatively, is formed, a phase containing a distorted hexagonal lattice evolving into the ScH<jats:sub><jats:italic>x</jats:italic></jats:sub> over a period of a few hours. The ScH<jats:sub><jats:italic>x</jats:italic></jats:sub> and h.c.p‐Sc change to Sc<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> when annealed in a vacuum of 5 · 10<jats:sup>−5</jats:sup> Torr at a <jats:italic>T</jats:italic> ≈ 800°C, while in a vacuum of 3 · 10<jats:sup>−8</jats:sup> Torr a change to h.c.p.‐Sc with negligible inclusions of oxidic Sc<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> particles takes place. Formation of oxide is observed also when heating the films with an electron beam directly in a microscope under vacuum of ∼ 8 · 10<jats:sup>−5</jats:sup> Torr. The specific electrical resistance ϱ of the film just after a condensation has taken place is approximatly by an order higher as against the ScH<jats:sub><jats:italic>x</jats:italic></jats:sub>‐ and h.c.p.‐Sc solid specimens. An irreversible gain in said resistance is observed while holding at a room temperature or annealing in a vacuum of 5 · 10<jats:sup>−5</jats:sup> Torr, this being associated with absorption of H<jats:sub>2</jats:sub>, O<jats:sub>2</jats:sub> and, possibly, of water steam, and then with formation of Sc<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>. Annealing in a vacuum of 5 · 10<jats:sup>−8</jats:sup> up to 10<jats:sup>−7</jats:sup> Torr involves a temperature relationship for ϱ of an intricated nature, this being accounted for by a structure transition as follows: <jats:disp-formula> </jats:disp-formula> A diode‐effect diminishing with a temperature rise is observed in annealed films.</jats:p> |
Format: | E-Article |
Quelle: | Wiley (CrossRef) |
Sprache: | Englisch |