%0 Electronic Article %A Schubert, Martin C. and Warta, Wilhelm %I Wiley %D 2007 %D 2007 %G English %@ 1062-7995 %@ 1099-159X %~ Katalog der Universitätsbibliothek Leipzig %T Prediction of diffusion length in multicrystalline silicon solar cells from trapping images on starting material %V 15 %J Progress in Photovoltaics: Research and Applications %V 15 %N 4 %P 331-336 %U http://dx.doi.org/10.1002/pip.738 %X AbstractAreas with high crystal defect density are known to have a strong impact on the performance of silicon solar cells. Trapping has been reported to be correlated with crystal defects. We compare spatially resolved measurements of the trapping effect on unprocessed wafers with diffusion length measurements on solar cells. An excellent correlation is found between these two measurements. This allows a prediction of diffusion length for the processed solar cell directly from the trap image, for a given cell process and comparable material. This technique has thus a great potential for inline process control of starting material in solar cell production. Copyright © 2006 John Wiley & Sons, Ltd. %Z https://katalog.ub.uni-leipzig.de/Record/ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9waXAuNzM4 %U https://katalog.ub.uni-leipzig.de/Record/ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9waXAuNzM4