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Experimental evidence of electron capture and emission from trap levels in Cz silicon
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Titel: |
Experimental evidence of electron capture and emission from trap levels in Cz silicon |
In: | physica status solidi (a), 214, 2017, 7 |
veröffentlicht: |
Wiley
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ISSN: |
1862-6300 1862-6319 |
DOI: | 10.1002/pssa.201700292 |
Zusammenfassung: | <jats:sec><jats:label /><jats:p>Up to now the existence of trap levels − defect levels in the forbidden band gap which temporary trap minority charge carriers − in Cz silicon was controversially discussed. We directly monitor the transient dynamics of the free electron density in the conduction band by the means of a time correlated single photon counting of photoluminescence. A variation of the experimental conditions reveals both a decrease of the electron density on a timescale of microseconds, which is not governed by recombination and an apparent generation of electrons on a scale of up to multiple seconds. We discuss that the transient dynamics may be excellently described by trap levels, providing strong evidence for their existence.</jats:p></jats:sec> |
Format: | E-Article |
Quelle: | Wiley (CrossRef) |
Sprache: | Englisch |