%0 Electronic Article %A Post, Regina and Niewelt, Tim and Schön, Jonas and Schindler, Florian and Schubert, Martin C. %I Wiley %D 2019 %D 2019 %G English %@ 1862-6300 %@ 1862-6319 %~ Katalog der Universitätsbibliothek Leipzig %T Imaging Interstitial Iron Concentrations in Gallium‐Doped Silicon Wafers %V 216 %J physica status solidi (a) %V 216 %N 10 %U http://dx.doi.org/10.1002/pssa.201800655 %X In this work, the established method of iron imaging is transferred from B‐doped silicon to Ga‐doped material. For this purpose, the pairing and splitting conditions are investigated and a preparation procedure suggested that ensures a sufficient fraction of iron–gallium pairing and splitting, respectively. Furthermore the defect parameters available in literature are compared and evaluated for a suitable description of the injection dependent carrier lifetime measurements. A parameter set that enables a coherent and adequate iron evaluation is suggested. Thus, a robust method for spatially resolved determination of the interstitial iron concentration in Ga‐doped silicon wafers is presented. %Z https://katalog.ub.uni-leipzig.de/Record/ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9wc3NhLjIwMTgwMDY1NQ %U https://katalog.ub.uni-leipzig.de/Record/ai-49-aHR0cDovL2R4LmRvaS5vcmcvMTAuMTAwMi9wc3NhLjIwMTgwMDY1NQ