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Effect of temperature on the electronic structure in n‐modulation‐doped AlxGa(1–x)As/GaAs heterostructure
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Titel: |
Effect of temperature on the electronic structure in n‐modulation‐doped AlxGa(1–x)As/GaAs heterostructure |
In: | physica status solidi c, 3, 2006, 9, S. 3316-3320 |
veröffentlicht: |
Wiley
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Umfang: | 3316-3320 |
ISSN: |
1862-6351 1610-1642 |
DOI: | 10.1002/pssc.200567048 |
Zusammenfassung: | <jats:title>Abstract</jats:title><jats:p>We theoretically study the subband structure of n‐modulation‐doped Al<jats:sub>x</jats:sub>Ga<jats:sub>(1–x)</jats:sub>As/GaAs heterostructure using a self‐consistent procedure to solve simultaneously the Schrödinger and Poisson equations. Our results show that the sheet electron concentration can be modified by both increasing the temperature and the spacer thickness. The results also indicate that the energy levels are not prolonged linearly as the temperature increases but show step‐like behavior. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
Format: | E-Article |
Quelle: | Wiley (CrossRef) |
Sprache: | Englisch |