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Light‐induced degradation in copper‐contaminated gallium‐doped silicon
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Personen und Körperschaften: | , , , , |
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Titel: |
Light‐induced degradation in copper‐contaminated gallium‐doped silicon |
In: | physica status solidi (RRL) – Rapid Research Letters, 7, 2013, 4, S. 262-264 |
veröffentlicht: |
Wiley
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Umfang: | 262-264 |
ISSN: |
1862-6254 1862-6270 |
DOI: | 10.1002/pssr.201307011 |
Zusammenfassung: | <jats:title>Abstract</jats:title><jats:p>To date, gallium‐doped Czochralski (Cz) silicon has constituted a solar cell bulk material free of light‐induced degradation. However, we measure light‐induced degradation in gallium‐doped Cz silicon in the presence of copper impurities. The measured degradation depends on the copper concentration and the material resistivity. Gallium‐doped Cz silicon is found to be less sensitive to copper impurities than boron‐doped Cz silicon, emphasizing the role of boron in the formation of copper‐related light‐induced degradation. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
Format: | E-Article |
Quelle: | Wiley (CrossRef) |
Sprache: | Englisch |