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Enhanced rear‐side reflection and firing‐stable surface passivation of silicon solar cells with capping polymer films
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Titel: |
Enhanced rear‐side reflection and firing‐stable surface passivation of silicon solar cells with capping polymer films |
In: | physica status solidi (RRL) – Rapid Research Letters, 7, 2013, 8, S. 530-533 |
veröffentlicht: |
Wiley
|
Umfang: | 530-533 |
ISSN: |
1862-6254 1862-6270 |
DOI: | 10.1002/pssr.201307200 |
Zusammenfassung: | <jats:title>Abstract</jats:title><jats:p>Low refractive index polymer materials have been investigated with a view to form the back surface mirror of advanced silicon solar cells. SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H or AlO<jats:italic><jats:sub>y</jats:sub></jats:italic> SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H polymer films were spun on top of an ultra‐thin (<10 nm) atomic‐layer‐deposited (ALD) Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer, itself deposited on low‐resistivity (1 Ω cm) p‐type crystalline silicon wafers. These double‐layer stacks were compared to both ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> single layers and ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/plasma‐enhanced chemical vapour deposited (PECVD) SiN<jats:italic><jats:sub>x</jats:sub></jats:italic> stacks, in terms of surface passivation, firing stability and rear‐side reflection. Very low surface recombination velocity (SRV) values approaching 3 cm/s were achieved with ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layers in the 4–8 nm range. Whilst the surface passivation of the single ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub> layer is maintained after a standard firing step typical of screen printing metallisation, a harsher firing regime revealed an enhanced thermal stability of the ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H and ALD Al<jats:sub>2</jats:sub>O<jats:sub>3</jats:sub>/AlO<jats:italic><jats:sub>y</jats:sub></jats:italic> SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H stacks. Using simple two‐dimensional optical modelling of rear‐side reflection it is shown that the low refractive index exhibited by SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H and AlO<jats:italic><jats:sub>y</jats:sub></jats:italic> SiO<jats:italic><jats:sub>x</jats:sub></jats:italic>:H results in superior optical performance as compared to PECVD SiN<jats:italic><jats:sub>x</jats:sub></jats:italic>, with gains in photogenerated current of ∼0.125 mA/cm<jats:sup>2</jats:sup> at a capping thickness of 100 nm. (© 2013 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)</jats:p> |
Format: | E-Article |
Quelle: | Wiley (CrossRef) |
Sprache: | Englisch |