Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN

Bibliographic Details
Authors and Corporations: Wahl, U., De Vries, B., Decoster, S., Vantomme, A., Correia, J.G.
Title: Effect of fluence on the lattice site of implanted Er and implantation induced strain in GaN
In: Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms, 267, 2009, 8-9, p. 1340-1344
published:
Elsevier BV
Physical Description:1340-1344
ISSN/ISBN: 0168-583X
Type of Resource:E-Article
Source:Elsevier BV (CrossRef)
Language: English