Spatially Resolved Impurity Identification via Temperature- and Injection-Dependent Photoluminescence Imaging

Bibliographic Details
Authors and Corporations: Mundt, Laura E., Schubert, Martin C., Schon, Jonas, Michl, Bernhard, Niewelt, Tim, Schindler, Florian, Warta, Wilhelm
Title: Spatially Resolved Impurity Identification via Temperature- and Injection-Dependent Photoluminescence Imaging
In: IEEE Journal of Photovoltaics, 5, 2015, 5, p. 1503-1509
published:
IEEE
Physical Description:1503-1509
ISSN/ISBN: 2156-3381
Summary:Photoluminescence-based impurity imaging methods have been shown to be able to quantify impurities with excellent detection limits of approximately 10<sup>10</sup> cm<sup>-3</sup>. They are, however, limited to metastable defects in p-type silicon only. In this paper, we present an approach that overcomes this limitation by evaluating temperature- and injection-dependent photoluminescence imaging. In contrast with temperature- and injection-dependent lifetime spectroscopy, we are not aiming for determining precise impurity parameters of known contaminants, but rather for identifying lifetime-limiting metal impurities using established impurity parameters from the literature. Our approach is to measure spatially resolved injection-dependent lifetimes by photoluminescence imaging and fit them with respect to established defect parameters. Additional measurements at higher temperature enhance the information content of the analysis. The two-defect approach first identifies the two lifetime-limiting defects and derives a candidate for a third defect. Subsequently, we can determine their concentrations. The presented method is not limited to doping type nor metastable defects and is, therefore, a promising method to characterize the spatially resolved distribution of a large variety of impurities.
Type of Resource:E-Article
Source:IEEE Xplore Library
sid-89-col-ieee
Language: English