Degradation of Crystalline Silicon Due to Boron–Oxygen Defects

Bibliographic Details
Authors and Corporations: Niewelt, Tim, Schon, Jonas, Warta, Wilhelm, Glunz, Stefan W., Schubert, Martin C.
Title: Degradation of Crystalline Silicon Due to Boron–Oxygen Defects
In: IEEE Journal of Photovoltaics, 7, 2017, 1, p. 383-398
published:
IEEE
Physical Description:383-398
ISSN/ISBN: 2156-3381
Summary:This paper gives an overview on the current understanding of a technologically relevant defect group in crystalline silicon related to the presence of boron and oxygen. It is commonly addressed as boron-oxygen defects and has been found to affect silicon devices, whose performance depends on minority charge carrier diffusion lengths-such as solar cells. The defects are a common limitation in Czochralski-grown p-type silicon, and their recombination activity develops under charge carrier injection and is, thus, commonly referred to as light-induced degradation. A multitude of studies investigating the effect have been published and introduced various trends and interpretations. This review intends to summarize established trends and provide a consistent nomenclature for the defect transitions in order to simplify discussion.
Type of Resource:E-Article
Source:IEEE Xplore Library
sid-89-col-ieee
Language: English